On-chip growth of semiconductor metal oxide nanowires for gas sensors: A review

• Published in: Journal of science. Advanced materials and devices Vol. 2; no. 3; pp. 263 - 285
• Main Authors: Hung, Chu Manh, Le, Dang Thi Thanh, Van Hieu, Nguyen
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-09-2017; Elsevier
• Subjects: Gas sensors; Metal oxides; Nanosensors; Nanowires; On-chip growth; Metal oxides; Nanosensors; Nanowires; On-chip growth; Gas sensors
• ISSN: 2468-2179; 2468-2179
• DOI: 10.1016/j.jsamd.2017.07.009

Semiconductor metal oxide nanowires (SMO-NWs) show great potential for novel gas sensor applications because of their distinct properties, such as a high surface area to volume aspect ratio, high crystallinity and perfect pathway for electron transfer (length of NW). SMO-NW sensors can be configured as resistors or field-effect transistors for gas detection and different configurations, such as a single NW, multiple NWs, and networked NW films, have been established. Surface-functionalizing NWs with catalyst elements and self-heating NWs provide additional advantages for highly selective and low-power consumption gas sensors. However, an appropriate design of SMO-NWs is of practical importance in enhancing the gas-sensing performance of SMO-NW sensors. The on-chip growth of SMO-NWs possesses many advantages which can thus be effectively used for the large-scale fabrication of SMO-NW sensors with improved gas response and stability. This review aims to provide up-to-date information on the on-chip fabrication of SnO2, ZnO, WO3, CuO, and other SMO-NW sensors. It also discusses a variety of promising approaches that help advance the on-chip fabrication of SMO-NW-based gas sensors and other NW-based devices.