Fabrication of ZnO Nanowires Using Nanoscale Spacer Lithography for Gas Sensors

Sensitive nanowires: ZnO nanowire arrays are fabricated by nanoscale spacer lithography, a top‐down paradigm consisting of photolithography, ZnO atomic‐layer deposition, and low‐damage dry etching. ZnO nanowire devices based on this technique (see picture) show good electrical transport and gas‐sens...

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Published in:Small (Weinheim an der Bergstrasse, Germany) Vol. 4; no. 8; pp. 1105 - 1109
Main Authors: Ra, Hyun-Wook, Choi, Kwang-Sung, Kim, Jin-Hwan, Hahn, Yoon-Bong, Im, Yeon-Ho
Format: Journal Article
Language:English
Published: Weinheim WILEY-VCH Verlag 01-08-2008
WILEY‐VCH Verlag
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Summary:Sensitive nanowires: ZnO nanowire arrays are fabricated by nanoscale spacer lithography, a top‐down paradigm consisting of photolithography, ZnO atomic‐layer deposition, and low‐damage dry etching. ZnO nanowire devices based on this technique (see picture) show good electrical transport and gas‐sensing properties to various concentrations of H2 and CO.
Bibliography:istex:28DAEB275BDA68182EFF7C38E20BFF6A1A74AFA8
Korea Research Foundation - No. KRF-2005-D00476-I02830; No. KRF-2006-D00411-I02959
This work was supported in part by a Korea Research Foundation Grant (KRF-2005-D00476-I02830, KRF-2006-D00411-I02959), and by Korea Science and Engineering Foundation Grant (R01-2006-000-11306-0) funded by the Korean Government (MES).
Korea Science and Engineering Foundation - No. R01-2006-000-11306-0
ark:/67375/WNG-T906QRT3-S
ArticleID:SMLL200700922
This work was supported in part by a Korea Research Foundation Grant (KRF‐2005‐D00476‐I02830, KRF‐2006‐D00411‐I02959), and by Korea Science and Engineering Foundation Grant (R01‐2006‐000‐11306‐0) funded by the Korean Government (MES).
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ISSN:1613-6810
1613-6829
DOI:10.1002/smll.200700922