Fabrication of ZnO Nanowires Using Nanoscale Spacer Lithography for Gas Sensors
Sensitive nanowires: ZnO nanowire arrays are fabricated by nanoscale spacer lithography, a top‐down paradigm consisting of photolithography, ZnO atomic‐layer deposition, and low‐damage dry etching. ZnO nanowire devices based on this technique (see picture) show good electrical transport and gas‐sens...
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Published in: | Small (Weinheim an der Bergstrasse, Germany) Vol. 4; no. 8; pp. 1105 - 1109 |
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Main Authors: | , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Weinheim
WILEY-VCH Verlag
01-08-2008
WILEY‐VCH Verlag |
Subjects: | |
Online Access: | Get full text |
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Summary: | Sensitive nanowires: ZnO nanowire arrays are fabricated by nanoscale spacer lithography, a top‐down paradigm consisting of photolithography, ZnO atomic‐layer deposition, and low‐damage dry etching. ZnO nanowire devices based on this technique (see picture) show good electrical transport and gas‐sensing properties to various concentrations of H2 and CO. |
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Bibliography: | istex:28DAEB275BDA68182EFF7C38E20BFF6A1A74AFA8 Korea Research Foundation - No. KRF-2005-D00476-I02830; No. KRF-2006-D00411-I02959 This work was supported in part by a Korea Research Foundation Grant (KRF-2005-D00476-I02830, KRF-2006-D00411-I02959), and by Korea Science and Engineering Foundation Grant (R01-2006-000-11306-0) funded by the Korean Government (MES). Korea Science and Engineering Foundation - No. R01-2006-000-11306-0 ark:/67375/WNG-T906QRT3-S ArticleID:SMLL200700922 This work was supported in part by a Korea Research Foundation Grant (KRF‐2005‐D00476‐I02830, KRF‐2006‐D00411‐I02959), and by Korea Science and Engineering Foundation Grant (R01‐2006‐000‐11306‐0) funded by the Korean Government (MES). ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2 |
ISSN: | 1613-6810 1613-6829 |
DOI: | 10.1002/smll.200700922 |