Effect of hydrogen content on the ZnO thin films on the surface of polyethylene terephthalate substrate through electron cyclotron resonance-metal organic chemical vapor deposition

• Published in: Journal of materials science Vol. 43; no. 10; pp. 3417 - 3423
• Main Authors: Park, J. H., Byun, D., Jeon, B. J., Lee, J. K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York Springer US 01-05-2008; Springer; Springer Nature B.V
• Subjects: Argon; Carrier gases; Characterization and Evaluation of Materials; Chemical composition; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Classical Mechanics; Coatings and Nanostructured Materials; Concentration (composition); Cross-disciplinary physics: materials science; rheology; Crystal structure; Crystallography; Crystallography and Scattering Methods; Cyclotron resonance; Electron cyclotron resonance; Electron mobility; Electrons; Exact sciences and technology; Hall effect; Hydrogen; Materials Science; Metalorganic chemical vapor deposition; Methods of deposition of films and coatings; film growth and epitaxy; NanoSmat 2007 - International Conference on Surfaces; Organic chemicals; Organic chemistry; Oxide coatings; Physics; Polyethylene terephthalate; Polyethylene terephthalates; Polymer Sciences; Solid Mechanics; Substrates; Surface roughness; Thin films; X-ray diffraction; X-ray photoelectron spectroscopy; Zinc; Zinc oxide; Zinc oxides; Hydrogen Content; Elliptic Cylinder; Polyethylene Terephthalate; Hall Mobility; Zinc Oxide; Ethylene terephthalate polymer; Atomic force microscopy; Scanning electron microscopy; RBS; Inorganic compounds; Hydrogen; Electron cyclotron-resonance; Controlled atmospheres; Oxides; Organic polymers; Zinc Oxides; Crystal growth from vapors; XRD; Experimental study; Fabrication property relation; Substrates; Thin films; Ambient temperature; Fabrication structure relation; X-ray photoelectron spectra
• ISSN: 0022-2461; 1573-4803
• DOI: 10.1007/s10853-008-2463-y

Zinc oxide thin films were deposited on polyethylene terephthalate (PET) substrate by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) method at room temperature with the addition of hydrogen to the reaction gas. Diethyl zinc (DEZn) as the source precursor, O
2
as oxidizer and argon as carrier gas were used for the preparation of ZnO film. Scanning electron micrography and X-ray diffraction analyses revealed that the ZnO grains with size of ca. 20 nm had an elliptic cylindrical configuration and were highly
c
-axis-oriented. The hydrogen content strongly affected the crystallographic structure, electrical property, and composition, as well as the surface roughness of the zinc oxide films. The chemical composition and surface states of the films were further examined by RBS and XPS to find the reason for the different electrical resistivity with variation of H
2
/Ar ratio. It can be concluded that hydrogen content plays an important role in increasing the Hall mobility, hole concentration, and electron concentration in our experimental range.