N-Doped Carbon NanoWalls for Power Sources
Cycling stability and specific capacitance are the most critical features of energy sources. Nitrogen incorporation in crystalline carbon lattice allows to increase the capacitance without increasing the mass of electrodes. Despite the fact that many studies demonstrate the increase in the capacitan...
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| Published in: | Scientific reports Vol. 9; no. 1; p. 6716 |
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| Main Authors: | , , , , , , , , , , , |
| Format: | Journal Article |
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| Abstract | Cycling stability and specific capacitance are the most critical features of energy sources. Nitrogen incorporation in crystalline carbon lattice allows to increase the capacitance without increasing the mass of electrodes. Despite the fact that many studies demonstrate the increase in the capacitance of energy sources after nitrogen incorporation, the mechanism capacitance increase is still unclear. Herein, we demonstrate the simple approach of plasma treatment of carbon structures, which leads to incorporation of 3 at.% nitrogen into Carbon NanoWalls. These structures have huge specific surface area and can be used for supercapacitor fabrication. After plasma treatment, the specific capacitance of Carbon NanoWalls increased and reached 600 F g
−1
. Moreover, we made a novel DFT simulation which explains the mechanism of nitrogen incorporation into the carbon lattice. This work paves the way to develop flexible thin film supercapacitors based on carbon nanowalls. |
|---|---|
| AbstractList | Cycling stability and specific capacitance are the most critical features of energy sources. Nitrogen incorporation in crystalline carbon lattice allows to increase the capacitance without increasing the mass of electrodes. Despite the fact that many studies demonstrate the increase in the capacitance of energy sources after nitrogen incorporation, the mechanism capacitance increase is still unclear. Herein, we demonstrate the simple approach of plasma treatment of carbon structures, which leads to incorporation of 3 at.% nitrogen into Carbon NanoWalls. These structures have huge specific surface area and can be used for supercapacitor fabrication. After plasma treatment, the specific capacitance of Carbon NanoWalls increased and reached 600 F g−1. Moreover, we made a novel DFT simulation which explains the mechanism of nitrogen incorporation into the carbon lattice. This work paves the way to develop flexible thin film supercapacitors based on carbon nanowalls. Cycling stability and specific capacitance are the most critical features of energy sources. Nitrogen incorporation in crystalline carbon lattice allows to increase the capacitance without increasing the mass of electrodes. Despite the fact that many studies demonstrate the increase in the capacitance of energy sources after nitrogen incorporation, the mechanism capacitance increase is still unclear. Herein, we demonstrate the simple approach of plasma treatment of carbon structures, which leads to incorporation of 3 at.% nitrogen into Carbon NanoWalls. These structures have huge specific surface area and can be used for supercapacitor fabrication. After plasma treatment, the specific capacitance of Carbon NanoWalls increased and reached 600 F g −1 . Moreover, we made a novel DFT simulation which explains the mechanism of nitrogen incorporation into the carbon lattice. This work paves the way to develop flexible thin film supercapacitors based on carbon nanowalls. Cycling stability and specific capacitance are the most critical features of energy sources. Nitrogen incorporation in crystalline carbon lattice allows to increase the capacitance without increasing the mass of electrodes. Despite the fact that many studies demonstrate the increase in the capacitance of energy sources after nitrogen incorporation, the mechanism capacitance increase is still unclear. Herein, we demonstrate the simple approach of plasma treatment of carbon structures, which leads to incorporation of 3 at.% nitrogen into Carbon NanoWalls. These structures have huge specific surface area and can be used for supercapacitor fabrication. After plasma treatment, the specific capacitance of Carbon NanoWalls increased and reached 600 F g . Moreover, we made a novel DFT simulation which explains the mechanism of nitrogen incorporation into the carbon lattice. This work paves the way to develop flexible thin film supercapacitors based on carbon nanowalls. |
| ArticleNumber | 6716 |
| Author | Zenova, Elena V. Mankelevich, Yuri A. Dyakonov, Pavel V. Evlashin, Stanislav A. Akhatov, Iskander S. Suetin, Nikolay V. Pilevsky, Andrey A. Maslakov, Konstantin I. Voronina, Ekaterina N. Vavilov, Sergei V. Maksimov, Yurii M. Pavlov, Alexander A. |
| Author_xml | – sequence: 1 givenname: Stanislav A. surname: Evlashin fullname: Evlashin, Stanislav A. email: s.evlashin@skoltech.ru organization: Center for Design Manufacturing & Materials, Skolkovo Institute of Science and Technology – sequence: 2 givenname: Yurii M. surname: Maksimov fullname: Maksimov, Yurii M. organization: Department of Chemistry, Lomonosov Moscow State University – sequence: 3 givenname: Pavel V. surname: Dyakonov fullname: Dyakonov, Pavel V. organization: Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University – sequence: 4 givenname: Andrey A. surname: Pilevsky fullname: Pilevsky, Andrey A. organization: Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University – sequence: 5 givenname: Konstantin I. orcidid: 0000-0002-0672-2683 surname: Maslakov fullname: Maslakov, Konstantin I. organization: Department of Chemistry, Lomonosov Moscow State University – sequence: 6 givenname: Yuri A. surname: Mankelevich fullname: Mankelevich, Yuri A. organization: Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University – sequence: 7 givenname: Ekaterina N. surname: Voronina fullname: Voronina, Ekaterina N. organization: Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Faculty of Physics, Lomonosov Moscow State University – sequence: 8 givenname: Sergei V. orcidid: 0000-0001-7694-8330 surname: Vavilov fullname: Vavilov, Sergei V. organization: Center for Energy Science and Technology, Skolkovo Institute of Science and Technology, Moscow Institute of Physics and Technology – sequence: 9 givenname: Alexander A. surname: Pavlov fullname: Pavlov, Alexander A. organization: Institute of microelectronics and nanotechnology, Russian Academy of Science – sequence: 10 givenname: Elena V. surname: Zenova fullname: Zenova, Elena V. organization: Institute of microelectronics and nanotechnology, Russian Academy of Science – sequence: 11 givenname: Iskander S. surname: Akhatov fullname: Akhatov, Iskander S. organization: Center for Design Manufacturing & Materials, Skolkovo Institute of Science and Technology – sequence: 12 givenname: Nikolay V. surname: Suetin fullname: Suetin, Nikolay V. organization: Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/31040328$$D View this record in MEDLINE/PubMed |
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| Title | N-Doped Carbon NanoWalls for Power Sources |
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