Simulation of Pulsed ELF Magnetic Fields Generated by GSM Mobile Phone Handsets for Human Electromagnetic Bioeffects Research

• Published in: Australasian physical & engineering sciences in medicine Vol. 31; no. 3; pp. 235 - 242
• Main Authors: Perentos, N., Iskra, S., McKenzie, R. J., Cosic, I.
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01-09-2008; Springer Nature B.V
• Subjects: Biological and Medical Physics; Biomedical and Life Sciences; Biomedical Engineering and Bioengineering; Biomedicine; Biophysics; Brain; Cell Phone - instrumentation; Cell phone systems; Cellular telephones; Computer Simulation; Electric fields; Electromagnetic Fields; ELF electromagnetic fields; Global system for mobile communications; Health aspects; Human exposure; Humans; Measurement; Medical and Radiation Physics; Microwaves; Models, Theoretical; Radiation Dosage; Radiometry - methods; Signal Processing, Computer-Assisted - instrumentation; Studies; Technological change; Theory; Time Division Multiple Access; Volunteers; Wireless communications; GSM; handset; magnetic field; EEG; ELF
• ISSN: 0158-9938; 1879-5447
• DOI: 10.1007/BF03179350

Human provocation studies that investigate the effects of Global System for Mobiles (GSM) communication systems on the brain have focused on Radio Frequency (RF) exposure. We wish to further extend such study by investigating the effect of both RF and Extremely Low Frequency (ELF) field exposure, the latter generated by the GSM handset's battery switching. The use of a commercial handset as an exposure source for such investigations is problematic for a number of reasons and therefore a simulated exposure source, capable of producing both RF and ELF components of exposure, is desirable. As a first step in developing such a source, we have quantified and characterized the ELF field from several commercial handsets (the RF characteristics being already well understood). Through experimental measurement we deduce that these fields can be sufficiently simulated by a 9 mm radius loop residing 10 mm beneath the front surface of the handset device and carrying enough current to generate peak fields of 25 T at the surface of the handset.