Electric control of magnetism at the Fe/BaTiO3 interface
Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO 3 system, only tiny changes of the interfacial Fe magnetic moment upon reversal of the BaTiO 3 dielectric polarization have been predicted...
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Published in: | Nature communications Vol. 5; no. 1; p. 3404 |
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Main Authors: | , , , , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
London
Nature Publishing Group UK
03-03-2014
Nature Publishing Group |
Subjects: | |
Online Access: | Get full text |
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Summary: | Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO
3
system, only tiny changes of the interfacial Fe magnetic moment upon reversal of the BaTiO
3
dielectric polarization have been predicted so far. Here, by using X-ray magnetic circular dichroism in combination with high-resolution electron microscopy and first principles calculations, we report on an undisclosed physical mechanism for interfacial magnetoelectric coupling in the Fe/BaTiO
3
system. At this interface, an ultrathin oxidized iron layer exists, whose magnetization can be electrically and reversibly switched on and off at room temperature by reversing the BaTiO
3
polarization. The suppression/recovery of interfacial ferromagnetism results from the asymmetric effect that ionic displacements in BaTiO
3
produces on the exchange coupling constants in the interfacial-oxidized Fe layer. The observed giant magnetoelectric response holds potential for optimizing interfacial magnetoelectric coupling in view of efficient, low-power spintronic devices.
Interfacial magnetoelectric coupling could lead to a new generation of memory devices. Here, Bertacco and colleagues observe a large electric-field switchable magnetoelectric coupling effect in iron/barium titanate heterostructures, which is due to a thin oxidized iron layer. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 USDOE Office of Science (SC), Basic Energy Sciences (BES) AC05-00OR22725 R.B., G.R., I.F. and J.F. designed the experiments. G.R. was responsible for thin film growth; D.G. and I.F. were responsible for dielectric characterization; G.R., R.B, D.P., M.C., C.R., G.P., P.T. and B.S. participated to the XMCD data collection. G.R., D.P. and P.T. carried out XMCD data analysis. M.V. was responsible for HREM experiments and S.P. and E.P. for ab-initio calculations. R.B, G.R. and J. F. wrote the manuscript. All authors contributed to and revised the manuscript. Authors contribution |
ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/ncomms4404 |