Low-Voltage Transistor Employing a High-Mobility Spin-Coated Chalcogenide Semiconductor

In2Se3 thin films are spin‐coated using a hydrazinium‐precursor approach to yield thin‐film transistors (TFTs, see Figure). The highly toxic and explosive solvent hydrazine, previously employed for spin‐coating SnS2–xSex films, has also been replaced with a more convenient solvent mixture of ethanol...

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Bibliographic Details
Published in:	Advanced materials (Weinheim) Vol. 17; no. 10; pp. 1285 - 1289
Main Authors:	Mitzi, D. B., Copel, M., Chey, S. J.
Format:	Journal Article
Language:	English
Published:	Weinheim WILEY-VCH Verlag 13-05-2005 WILEY‐VCH Verlag
Subjects:	Field-effect transistors Selenium Semiconductors Thin films
Online Access:	Get full text
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Summary:	In2Se3 thin films are spin‐coated using a hydrazinium‐precursor approach to yield thin‐film transistors (TFTs, see Figure). The highly toxic and explosive solvent hydrazine, previously employed for spin‐coating SnS2–xSex films, has also been replaced with a more convenient solvent mixture of ethanolamine and dimethyl sulfoxide. Low‐voltage operation (< 8 V) of TFTs based on spin‐coated In2Se3 yields mobilities as high as 16 cm2 V–1 s–1 and on/off ratios of 106.
Bibliography:	The authors thank C. Dimitrakopoulos for useful discussions, A. Kellock, D. Martinez, D. DiMilia, and R. Pezzi for technical assistance, and A. Afzali for solvent distillation. istex:4E27E16B5F0743CCB3CA1AD3024129B24FDB93E4 ark:/67375/WNG-QMR67HSG-S ArticleID:ADMA200401443 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.200401443