Uniform pyramid formation on alkaline-etched polished monocrystalline (100) silicon wafers

Uniform pyramid formation on alkaline-etched polished monocrystalline (100) silicon wafers

Pyramidal texturing of monocrystalline silicon using alkaline etchants depends strongly upon the initial condition of the wafer surface and upon etching parameters. Texturization of polished wafers is often incomplete, with non‐textured areas arising to yield high values of reflectance. A new techni...

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Bibliographic Details
Published in:Progress in photovoltaics Vol. 4; no. 6; pp. 435 - 438
Main Authors: Hylton, Jessica D., Kinderman, Ronald, Burgers, Antonius R., Sinke, Wim C., Bressers, Peter M. M. C.
Format: Journal Article
Language:English
Published: New York Wiley Subscription Services, Inc., A Wiley Company 01-11-1996
Online Access:Get full text
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Summary:Pyramidal texturing of monocrystalline silicon using alkaline etchants depends strongly upon the initial condition of the wafer surface and upon etching parameters. Texturization of polished wafers is often incomplete, with non‐textured areas arising to yield high values of reflectance. A new technique is introduced for uniform pyramid formation on polished wafers. Nitrogen is used to expel dissolved oxygen in the etch solution, since it has been observed that oxidizing agents act to encourage polished etch surfaces.
Bibliography:ArticleID:PIP150
ECN
ark:/67375/WNG-84X4TDBT-W
istex:11FDB7D3D19C7DBBDC2AB7C85B11A700AB135E6D
ISSN:1062-7995
1099-159X
DOI:10.1002/(SICI)1099-159X(199611/12)4:6<435::AID-PIP150>3.0.CO;2-5