Control of chemical bonding of the ZnO surface grown by molecular beam epitaxy

• Published in: Applied surface science Vol. 237; no. 1-4; pp. 348 - 351
• Main Authors: Ogata, K., Komuro, T., Hama, K., Koike, K., Sasa, S., Inoue, M., Yano, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15-10-2004; Elsevier Science
• Subjects: Biosensor; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electron and ion emission by liquids and solids; impact phenomena; Exact sciences and technology; Hybrid; Materials science; MBE; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Photoemission and photoelectron spectra; Physics; Surface bonding; XPS; ZnO; 78.55.Ap; MBE; Surface bonding; Biosensor; Hybrid; ZnO; XPS; 81.15.Hi; 87.80.–y; 61.72.Vv; Angular resolution; Field effect transistors; Plasma assisted processing; Heat treatments; 87.80.-y ZnO; Film growth; Zinc oxides; Molecular beam epitaxy; Chemical bonds; X-ray photoelectron spectra
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.06.095

Toward the fabrication of enzyme modified field effect transistors (EnFETs) as one of organic/inorganic hybridized structures, surface bonding of the ZnO grown by molecular beam epitaxy was controlled by ex situ treatments. Angle resolved X-ray photoelectron spectroscopy (XPS) measurement revealed that OH bonds exist at the surface of ZnO. It was found that the number of OH bond could be changed with reversibility using plasma and thermal treatments.