Formation of the ordered ensemble of cobalt nanocylinders in pores of anodic aluminum oxide on the surface of GaAs structures

• Published in: Journal of communications technology & electronics Vol. 58; no. 1; pp. 72 - 74
• Main Authors: Gudkov, V. A., Dukhnovskii, M. P., Vedeneev, A. S., Kozlov, A. M., Ryl’kov, V. V., Temiryazeva, M. P., Fedorov, Yu. Yu, Bugaev, A. S.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 2013; Springer; Springer Nature B.V
• Subjects: Aluminum; Aluminum oxide; Analysis; Anodic; Cobalt; Communications Engineering; Communications technology; Electrolytes; Electrons; Engineering; Gallium arsenide; Hydrogen; Microscopy; Nanocomposites; Nanoelectronics; Nanomaterials; Nanostructure; Nanostructured materials; Networks; Oxidation; Porosity; Production methods; Production processes; Quantum dots; Studies; GaAs Surface; Uniform Growth; Cobalt; GaAs; Anodic Aluminum Oxide
• ISSN: 1064-2269; 1555-6557
• DOI: 10.1134/S1064226913010051

A method for creation of cobalt nanocylinder quasi-regular ensembles with controlled height in the pores of anodic aluminum oxide on the surface of GaAs structures with a thin
n
-GaAs surface layer is developed. The pores of aluminum oxide are filled using galvanic deposition of cobalt from the CoCl
2
solution, so that hydrogen emission is minimized and the uniform growth of cobalt in the pores is provided. The method is promising for development of the matrix hybrid magnetic-semiconductor structures for spintronics.