High-frequency reactive diode sputtering of magnetite films on the sapphire surface

• Published in: Journal of communications technology & electronics Vol. 59; no. 9; pp. 977 - 979
• Main Authors: Luzanov, V. A., Vedeneev, A. S., Ryl’kov, V. V., Kozlov, A. M., Nikolaev, S. N., Temiryazeva, M. P., Chernoglazov, K. Yu, Bugaev, A. S.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-09-2014; Springer; Springer Nature B.V
• Subjects: Analysis; Blocking; Chemical vapor deposition; Communications Engineering; Communications equipment; Communications technology; Deposition; Diodes; Electronics; Electrons; Engineering; Epitaxy; Ferric oxide; Ferromagnetism; Iron; Iron compounds; Iron oxides; Magnetic fields; Magnetite; Microscopy; Nanoelectronics; Networks; Oxidation; Polycrystals; Random access memory; Sapphire; Sputtering; Studies; Sapphire Surface; Texture Phase; Magnetite; Magnetic Force Microscopy; Magnetite Film
• ISSN: 1064-2269; 1555-6557
• DOI: 10.1134/S1064226914090058

The conditions (oxygen partial pressure and growth rate) for the deposition of magnetite (iron oxide) Fe
3
O
4
on the
r
plane of the single-crystalline sapphire using the high-frequency reactive diode sputtering of the Fe target are determined. The resulting ferromagnetic layers exhibit polycrystalline structure with a typical block size of 100–200 nm. The X-ray analysis is used to demonstrate that the textured phase of magnetite that is normally oriented with respect to the substrate dominates in the blocks and Fe and Fe
2
O
3
impurities are almost absent.