Photoconversion Optimization of Pulsed-Laser-Deposited p-CZTS/n-Si-Nanowires Heterojunction-Based Photovoltaic Devices

We report on the achievement of novel photovoltaic devices based on the pulsed laser deposition (PLD) of p-type Cu2ZnSnS4 (CZTS) layers onto n-type silicon nanowires (SiNWs). To optimize the photoconversion efficiency of these p-CZTS/n-SiNWs heterojunction devices, both the thickness of the CZTS fil...

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Bibliographic Details
Published in:	Nanomaterials (Basel, Switzerland) Vol. 10; no. 7; p. 1393
Main Authors:	Oulad Elhmaidi, Zakaria, Abd-Lefdil, Mohammed, El Khakani, My Ali
Format:	Journal Article
Language:	English
Published:	Basel MDPI AG 17-07-2020 MDPI
Subjects:	Ablation Computer architecture Cu2ZnSnS4 CZTS Energy conversion efficiency Etching Film thickness Heterojunction devices heterojunctions Lasers Magnesium fluorides Nanotechnology Nanowires Optimization Optoelectronic devices Photovoltaic cells Photovoltaics Pulsed laser deposition Pulsed lasers Quantum efficiency Silicon Silicon nanowires Silicon substrates Silicon wafers Solar cells Sulfurization Thin films Zinc oxide
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