Undoped and rare-earth doped GaN quantum dots on AlGaN

We study the self organized growth of GaN quantum dots deposited by molecular beam epitaxy on AlxGa1–xN, with x varying between 1 and 0.21. As a result of the specific strain relaxation mechanism of AlxGa1–xN on AlN, it is found that dots can be formed for an Al content as low as about 30%. Monopola...

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Bibliographic Details
Published in:	Physica Status Solidi (b) Vol. 243; no. 7; pp. 1472 - 1475
Main Authors:	Hori, Yuji, Andreev, Thomas, Florian, Thomas, Bellet-Amalric, Edith, Le Si Dang, Daniel, Tanaka, Mitsuhiro, Oda, Osamu, Daudin, Bruno
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Berlin WILEY-VCH Verlag 01-06-2006 WILEY‐VCH Verlag Wiley
Subjects:	78.55.Cr 78.67.Pt 81.07.Ta 81.16.Dn Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum dots Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Schottky barriers Gallium nitrides Quantum dots Doping Active layer Electroluminescence Europium additions Stress relaxation Self organization Aluminium nitrides Visible radiation Molecular beam epitaxy Chemical composition Indium nitrides
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Summary:	We study the self organized growth of GaN quantum dots deposited by molecular beam epitaxy on AlxGa1–xN, with x varying between 1 and 0.21. As a result of the specific strain relaxation mechanism of AlxGa1–xN on AlN, it is found that dots can be formed for an Al content as low as about 30%. Monopolar devices have been realized by depositing Schottky contacts on n‐type doped Al0.5Ga0.5N. Finally, electroluminescence of Eu‐doped GaN quantum dots embedded in n‐type Al0.5Ga0.5N has been demonstrated, emphasizing the potentialities of such an active layer for room temperature visible light emission. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:	ark:/67375/WNG-JMJ5Q81W-P ArticleID:PSSB200565190 istex:EE984CB1BF1A14816C96DC0D54E06C735A35397A ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0370-1972 1521-3951
DOI:	10.1002/pssb.200565190