Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

• Published in: IEEE journal of quantum electronics Vol. 24; no. 8; pp. 1593 - 1604
• Main Authors: Blood, P., Colak, S., Kucharska, A.I.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-08-1988; Institute of Electrical and Electronics Engineers
• Subjects: Blood; Exact sciences and technology; Excitons; Fundamental areas of phenomenology (including applications); Laboratories; Laser modes; Laser transitions; Lasers; Optics; Photonic band gap; Physics; Predictive models; Quantum well lasers; Semiconductor lasers; laser diodes; Spontaneous emission; Threshold current; Gallium Arsenides; Aluminium Gallium Arsenides Mixed; Quantum well; Semiconductor laser
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.7090

Gain spectra and gain-current relations are calculated for GaAs-AlGaAs quantum-well lasers using a model which incorporates a phenomenological description of bandgap narrowing due to many-body effects at high injection, transition broadening by a carrier-density-dependent intraband scattering process, and broadening of the density of states function by fluctuations in the well width. The justification for including all these phenomena is made by examining spontaneous emission spectra observed through contact windows on quantum-well lasers.< >