High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film Transistors

• Published in: IEEE electron device letters Vol. 31; no. 4; pp. 311 - 313
• Main Authors: Park, Kyung-Bae, Seon, Jong-Baek, Kim, Gun Hee, Yang, Mino, Koo, Bonwon, Kim, Hyun Jae, Ryu, Myung-Kwan, Lee, Sang-Yoon
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-04-2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphous materials; Amorphous silicon; Applied sciences; Display; Display device; Electric potential; Electronics; Exact sciences and technology; Indium; indium zinc oxide (IZO); Microelectronic fabrication (materials and surfaces technology); Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; solution process; Stress measurement; Temperature dependence; Temperature measurement; Thin film transistors; thin-film transistor (TFT); Threshold voltage; Time measurement; Transistors; Voltage; Zinc oxide; Display equipment; Voltage threshold; High performance; Amorphous material; Voltage dependence; Depletion mode; Gate voltage; thin-film transistor (TFT); Transfer characteristic; indium zinc oxide (IZO); Microelectronic fabrication; Wet process; solution process; Drain voltage; Display device; Thin film transistor; Photolithography; Growth from solution; Electrical characteristic
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2010.2040130

We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm 2 / V·s, threshold voltages of - 0.30 V, turn-on voltages of -1.50 V, on/off ratios of 10 9 , and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.