Direct extraction of substrate network parameters for RF MOSFET modeling using a simple test structure

• Published in: IEEE electron device letters Vol. 27; no. 2; pp. 130 - 132
• Main Authors: Mahalingam, U., Rustagi, S.C., Samudra, G.S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-02-2006; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; CMOS RF Modeling; Data mining; Design. Technologies. Operation analysis. Testing; Devices; Diodes; Electrical resistance measurement; Electronics; Exact sciences and technology; Extraction; Gates; Impedance; Integrated circuits; Mathematical models; Microelectronics; MOSFET circuits; MOSFETs; Networks; Radio frequencies; Radio frequency; Resistors; RF MOSFET parameter extraction; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Simulation; substrate network; substrate resistance; Switches; Testing; Testing, measurement, noise and reliability; Transistors; MOSFET; RF MOSFET parameter extraction; CMOS RF Modeling; substrate network; Testing equipment; Two-port networks; Radiofrequency integrated circuits; CMOS integrated circuits; substrate resistance; Modeling; Parameter extraction
• DOI: 10.1109/LED.2005.863132
• EISSN: 1558-0563
• ISSN: 0741-3106

This letter presents a novel test structure to accurately extract the substrate network parameters for RF MOSFET modeling from two-port measurements. The test structure used in the common-gate configuration isolates the gate network to make the substrate network distinctly accessible to measurements. A methodology is developed to directly extract the substrate network from the measured data. The method is further verified and validated by the excellent match obtained between measured and simulated two-port parameters.