Towards neuromorphic electronics: Memristors on foldable silicon fabric

• Published in: Microelectronics Vol. 45; no. 11; pp. 1392 - 1395
• Main Authors: Ghoneim, Mohamed T., Zidan, Mohammed A., Salama, Khaled N., Hussain, Muhammad M.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-11-2014
• Subjects: Architecture; Construction; Density; Devices; Electronics; Fabrics; Foldable electronics; Integration density; Memory devices; Memristive devices; Neuromorphic computing; Preserves; Silicon; Integration density; Foldable electronics; Memristive devices; Neuromorphic computing
• ISSN: 1879-2391; 0026-2692; 1879-2391
• DOI: 10.1016/j.mejo.2014.07.011

The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex׳s folded pattern for ultra-compact design.