Theoretical investigation of the breakdown electric field of SiC polymorphs

The breakdown electric field of several SiC polymorphs has been investigated theoretically using a concept of “recovery rate,” which is obtained by first principles calculations. A good relationship between the experimental breakdown electric fields and the calculated recovery rate of 4H-, 6H-, and...

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Bibliographic Details
Published in:	Physica. B, Condensed matter Vol. 532; pp. 99 - 102
Main Authors:	Yamaguchi, Kikou, Kobayashi, Daisuke, Yamamoto, Tomoyuki, Hirose, Kazuyuki
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-03-2018 Elsevier BV
Subjects:	Band gap Breakdown Breakdown electric field Crystal structure Electric fields First principles First principles calculation Germanium sulfide Mathematical analysis Metal oxides Polymorphism Polymorphs Recovery Semiconductors SiC Silicon carbide Breakdown electric field First principles calculation SiC Polymorphs
Online Access:	Get full text
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