Implantation and redistribution of dopants and isolation species in GaN and related compounds

• Published in: Solid-state electronics Vol. 38; no. 7; pp. 1329 - 1333
• Main Authors: Wilson, R.G., Vartuli, C.B., Abernathy, C.R., Pearton, S.J., Zavada, J.M.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01-07-1995; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Interfaces; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Insulation; Binary compound; Gallium Nitrides; Ion implantation; Annealing; Doping; Composition effect; Secondary ion mass spectrometry; Epitaxial film; Experimental study; III-V compound; Thin film; Aluminium Nitrides; Indium Nitrides; Concentration distribution
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/0038-1101(94)00251-A

Twelve different elements used for doping or isolation were implanted into GaN (and selected species into AlN and InN), and the resulting range parameters were measured by secondary ion mass spectrometry. For lighter elements such as Be, F and H, the agreement between experimental range and range straggle determined using a Pearson IV computer fitting routine and those predicted by TRIM 92 calculations was good, but for heavier elements such as Ge and Se, the discrepancy can be as much as a factor of two in range. There was little redistribution of any of the investigated species up to 700°C, except for
2H in AlN and S in GaN. Elements such as F and Be, which are generally rapid diffusers in III–V compounds, do not display any redistribution in GaN for temperatures up to 800°C.