Epitaxial growth of high quality cubic MgZnO films on MgO substrate

• Published in: Journal of crystal growth Vol. 312; no. 7; pp. 875 - 877
• Main Authors: Wang, L.K., Ju, Z.G., Shan, C.X., Zheng, J., Li, B.H., Zhang, Z.Z., Yao, B., Zhao, D.X., Shen, D.Z., Zhang, J.Y.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15-03-2010; Elsevier
• Subjects: A1. Cubic structure A1. Atomic force microscopy; A1. Smooth surface; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; Atomic force microscopy; B2. MgZnO films; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal growth; Crystalline state (including molecular motions in solids); Diffraction; Epitaxial growth; Epitaxy; Exact sciences and technology; Islands; Magnesium oxide; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Orientation; Physics; Structure of solids and liquids; crystallography; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Theory of crystal structure, crystal symmetry; calculations and modeling; B2. MgZnO films; A1. Smooth surface; A1. Cubic structure A1. Atomic force microscopy; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; Atomic force microscopy; Cubic lattices; Epitaxial layers; Symmetry property; Epitaxy; Magnesium oxide; Roughness; A1. Cubic structure; Optoelectronic devices; XRD; MOCVD; Crystal perfection; Surface states; Thin films; A1. Atomic force microscopy; Monocrystals; Growth mechanism
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.01.009

Epitaxial growth of cubic Mg
0.33Zn
0.67O films on MgO (1
0
0) substrate by metalorganic chemical vapor deposition (MOCVD) was reported. X-ray diffraction (XRD)
ω-scans and
ϕ-scans demonstrate the films exhibit single (2
0
0) orientation and highly uniform in-plane orientation with four-fold symmetry. The epitaxial relationship between the layer and substrate is MgZnO (1
0
0)//MgO (1
0
0). Smooth surface with the rms roughness of 1.8
nm in 5×5
μm area is obtained. Atomic force microscopy (AFM) reveals formation of islands attributed to the strain in the epitaxial MgZnO films. These results demonstrate the high quality single crystal Mg
0.33Zn
0.67O films and their potential in high-performance deep ultraviolet optoelectronic devices.