Basic Model Relations for Temperature Dependencies of Fundamental Energy Gaps in Semiconductors

• Published in: Physica status solidi. B. Basic research Vol. 200; no. 1; pp. 155 - 172
• Main Author: P ssler, R.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01-03-1997; WILEY‐VCH Verlag; Wiley
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron density of states and band structure of crystalline solids; Electron states; Exact sciences and technology; Physics; Polarons and electron-phonon interactions; Semiconductor compounds; Theoretical study; Temperature dependence; Energy gap; Semiconductor materials; Electron phonon interaction
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/1521-3951(199703)200:1<155::AID-PSSB155>3.0.CO;2-3

Novel analytical models describing the temperature dependencies of fundamental energy gaps in semiconductors are shown to be consistent with basic equations due to the electron–phonon interaction mechanism. The principal deficiencies of three‐parameter models and the inevitability of using more elaborate four‐parameter representations are illustrated by alternative fittings of high‐precision Eg(T)‐data given for GaAs by Grilli et al. Peculiarities of parameter constellations revealed by measured Eg(T)‐dependencies in wide‐gap versus medium‐gap materials are briefly discussed.