Characterization and optimization of porogen-based PECVD deposited extreme low- k materials as a function of UV-cure time

A promising method to produce low- k films with a dielectric constant, k, less than 2.3, consists in using a porogen-based PECVD process in combination with UV cure for both porogen removal and thermo-mechanical properties enhancement. Aurora® ELK films with a dielectric constant of less than 2.3 an...

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Bibliographic Details
Published in:	Surface & coatings technology Vol. 201; no. 22; pp. 9264 - 9268
Main Authors:	Verdonck, Patrick, De Roest, David, Kaneko, Shinya, Caluwaerts, Rudy, Tsuji, Naoto, Matsushita, Kiyohiro, Kemeling, Nathan, Travaly, Youssef, Sprey, Hessel, Schaekers, Marc, Beyer, Gerald
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Lausanne Elsevier B.V 25-09-2007 Elsevier
Subjects:	52.75R 77.55 78.20C 81.05R 81.40T Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science; rheology Exact sciences and technology Low- k material Materials science Methods of deposition of films and coatings; film growth and epitaxy PECVD Physics Porogen UV cure UV cure Porogen 52.75R 81.40T Low- k material PECVD 78.20C 77.55 81.05R CVD Surface treatments PECVD; Low-k material; Porogen; UV cure 77.55; 52.75R; 81.05R; 78.20C; 81.40T
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