High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of UV-LEDs, planar AlN and epitaxial laterally overgrown (ELO) AlN on sapphire (0 0 0 1) substrates were compared. The output power of UV-LEDs grow...

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Published in:	Journal of crystal growth Vol. 310; no. 7; pp. 2326 - 2329
Main Authors:	Nagamatsu, Kentaro, Okada, Narihito, Sugimura, Hiroki, Tsuzuki, Hirotoshi, Mori, Fumiaki, Iida, Kazuyoshi, Bando, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-04-2008 Elsevier
Subjects:	A3. Metal-organic vapor phase epitaxy Applied sciences B1. Nitrides B3. Light-emitting diodes Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Materials Materials science Methods of deposition of films and coatings; film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Vapor phase epitaxy; growth from vapor phase 85.60.Jb 07.20.Ka 81.15.Gh B1. Nitrides B3. Light-emitting diodes A3. Metal-organic vapor phase epitaxy Output power Epitaxy Aluminium nitride Template reaction 81.15.Gh; 85.60.Jb; 07.20.Ka Epitaxial film Gallium nitride Light emitting diode Microelectronic fabrication Ultraviolet radiation MOVPE method A3. Metal-organic vapor phase epitaxy; B1. Nitrides; B3. Light-emitting diodes Optoelectronic device III-V semiconductors
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Abstract	Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of UV-LEDs, planar AlN and epitaxial laterally overgrown (ELO) AlN on sapphire (0 0 0 1) substrates were compared. The output power of UV-LEDs grown on ELO-AlN was 27 times higher than that of UV-LEDs on the planar AlN template.
AbstractList	Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of UV-LEDs, planar AlN and epitaxial laterally overgrown (ELO) AlN on sapphire (0 0 0 1) substrates were compared. The output power of UV-LEDs grown on ELO-AlN was 27 times higher than that of UV-LEDs on the planar AlN template. Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of UV-LEDs, planar AlN and epitaxial laterally overgrown (ELO) AlN on sapphire (0 0 0 1) substrates were compared. The output power of UV-LEDs grown on ELO-AlN was 27 times higher than that of UV-LEDs on the planar AlN template.
Author	Kamiyama, Satoshi Iida, Kazuyoshi Bando, Akira Sugimura, Hiroki Nagamatsu, Kentaro Iwaya, Motoaki Akasaki, Isamu Amano, Hiroshi Tsuzuki, Hirotoshi Mori, Fumiaki Okada, Narihito
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Keywords	85.60.Jb 07.20.Ka 81.15.Gh B1. Nitrides B3. Light-emitting diodes A3. Metal-organic vapor phase epitaxy Output power Epitaxy Aluminium nitride Template reaction 81.15.Gh; 85.60.Jb; 07.20.Ka Epitaxial film Gallium nitride Light emitting diode Microelectronic fabrication Ultraviolet radiation MOVPE method A3. Metal-organic vapor phase epitaxy; B1. Nitrides; B3. Light-emitting diodes Optoelectronic device III-V semiconductors
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Snippet	Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of... Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of...
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SubjectTerms	A3. Metal-organic vapor phase epitaxy Applied sciences B1. Nitrides B3. Light-emitting diodes Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Materials Materials science Methods of deposition of films and coatings; film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Vapor phase epitaxy; growth from vapor phase
Title	High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN
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