Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD

Zinc (Zn) diffusion through MOCVD-fabricated InP and InGaAsP layers, and the corresponding Zn doping profile at the heterojunction interface were studied as part of the doping profile control for laser diodes. It was found that the Zn doping profile has specific discontinuity at the heterojunction i...

Full description

Saved in:

Bibliographic Details
Published in:	Journal of crystal growth Vol. 297; no. 1; pp. 44 - 51
Main Authors:	Kadoiwa, Kaoru, Ono, Kenichi, Ohkura, Yuji
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 15-12-2006 Elsevier
Subjects:	A1. Diffusion A3. Metalorganic vapor phase epitaxy B2. Semiconducting III-V materials Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science; rheology Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Materials science Methods of deposition of films and coatings; film growth and epitaxy Optics Physics Semiconductor lasers; laser diodes 78.66.Fd 78.40.Fy A1. Diffusion 78.20.Ci 78.20.Bh A3. Metalorganic vapor phase epitaxy B2. Semiconducting III-V materials Inorganic compounds Epitaxial layers Zinc additions Thick films Composition effect Doping profiles Crystal growth from vapors Experimental study Laser diodes MOCVD CVD Interfaces Secondary ion mass spectra 78.40.Fy; 78.20.Ci; 78.20.Bh; 78.66.Fd Ionization Al. Diffusion; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials Heterojunctions Modelling Diffusion coefficient Diffusion Depth profiles Heterostructures Heterointerface
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Be the first to leave a comment!