Growth of thick AlN layers by hydride vapor-phase epitaxy

Growth of AlN on sapphire (0 0 0 1) substrates by hydride vapor-phase epitaxy (HVPE) was investigated using AlCl 3 and NH 3 as source gases in the temperature range from 950 to 1100 °C. It was found that the full-width at half-maximum (FWHM) values of the X-ray diffraction (XRD) rocking curves of th...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 281; no. 1; pp. 62 - 67
Main Authors:	Kumagai, Yoshinao, Yamane, Takayoshi, Koukitu, Akinori
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-07-2005 Elsevier
Subjects:	A1. Crystal structure A3. Hydride vapor-phase epitaxy B1. Nitrides B2. Semiconducting aluminum compounds Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of crystal growth; physics of crystal growth Physics 61.10.Nz B1. Nitrides 68.37.−d A1. Crystal structure 81.15.Kk B2. Semiconducting aluminum compounds 81.05.Ea A3. Hydride vapor-phase epitaxy Temperature 81.15.Kk Al. Crystal structure Inorganic compounds Pressure effects Growth rate Thick films VPE Hydrides XRD Substrates Partial pressure 68.37.-d Aluminium nitrides Rocking curve Growth mechanism Mirrors Surface layers Gallium selenides
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