Growth of thick AlN layers by hydride vapor-phase epitaxy

Growth of AlN on sapphire (0 0 0 1) substrates by hydride vapor-phase epitaxy (HVPE) was investigated using AlCl 3 and NH 3 as source gases in the temperature range from 950 to 1100 °C. It was found that the full-width at half-maximum (FWHM) values of the X-ray diffraction (XRD) rocking curves of th...

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Published in:	Journal of crystal growth Vol. 281; no. 1; pp. 62 - 67
Main Authors:	Kumagai, Yoshinao, Yamane, Takayoshi, Koukitu, Akinori
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-07-2005 Elsevier
Subjects:	A1. Crystal structure A3. Hydride vapor-phase epitaxy B1. Nitrides B2. Semiconducting aluminum compounds Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of crystal growth; physics of crystal growth Physics 61.10.Nz B1. Nitrides 68.37.−d A1. Crystal structure 81.15.Kk B2. Semiconducting aluminum compounds 81.05.Ea A3. Hydride vapor-phase epitaxy Temperature 81.15.Kk Al. Crystal structure Inorganic compounds Pressure effects Growth rate Thick films VPE Hydrides XRD Substrates Partial pressure 68.37.-d Aluminium nitrides Rocking curve Growth mechanism Mirrors Surface layers Gallium selenides
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Abstract	Growth of AlN on sapphire (0 0 0 1) substrates by hydride vapor-phase epitaxy (HVPE) was investigated using AlCl 3 and NH 3 as source gases in the temperature range from 950 to 1100 °C. It was found that the full-width at half-maximum (FWHM) values of the X-ray diffraction (XRD) rocking curves of the (0 0 0 2) and ( 1 0 1 ¯ 0 ) planes of the c-axis oriented AlN layers decreased with increasing growth temperature. An AlN layer showing a mirror-like surface could be grown at 1100 °C with a growth rate of 1.7 μm/h. Growth rate was found to increase with increasing AlCl 3 input partial pressure and with decreasing distance ( L) between the end of the AlCl 3 injection nozzle and the sapphire substrate. The growth rate reached 122 μm/h with an AlCl 3 input partial pressure of 2.0×10 −3 atm and L = 25 mm but the crystalline quality became poor when the growth rate rose above 10 μm/h.
AbstractList	Growth of AlN on sapphire (0001) substrates by hydride vapor-phase epitaxy (HVPE) was investigated using AlCl3 and NH3 as source gases in the temperature range from 950 to 1100 deg C. It was found that the full-width at half-maximum (FWHM) values of the X-ray diffraction (XRD) rocking curves of the (0002) and planes of the c-axis oriented AlN layers decreased with increasing growth temperature. An AlN layer showing a mirror-like surface could be grown at 1100 deg C with a growth rate of 1.7mum/h. Growth rate was found to increase with increasing AlCl3 input partial pressure and with decreasing distance (L) between the end of the AlCl3 injection nozzle and the sapphire substrate. The growth rate reached 122mum/h with an AlCl3 input partial pressure of 2.0X10-3atm and but the crystalline quality became poor when the growth rate rose above 10mum/h. Growth of AlN on sapphire (0 0 0 1) substrates by hydride vapor-phase epitaxy (HVPE) was investigated using AlCl 3 and NH 3 as source gases in the temperature range from 950 to 1100 °C. It was found that the full-width at half-maximum (FWHM) values of the X-ray diffraction (XRD) rocking curves of the (0 0 0 2) and ( 1 0 1 ¯ 0 ) planes of the c-axis oriented AlN layers decreased with increasing growth temperature. An AlN layer showing a mirror-like surface could be grown at 1100 °C with a growth rate of 1.7 μm/h. Growth rate was found to increase with increasing AlCl 3 input partial pressure and with decreasing distance ( L) between the end of the AlCl 3 injection nozzle and the sapphire substrate. The growth rate reached 122 μm/h with an AlCl 3 input partial pressure of 2.0×10 −3 atm and L = 25 mm but the crystalline quality became poor when the growth rate rose above 10 μm/h.
Author	Kumagai, Yoshinao Yamane, Takayoshi Koukitu, Akinori
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Keywords	61.10.Nz B1. Nitrides 68.37.−d A1. Crystal structure 81.15.Kk B2. Semiconducting aluminum compounds 81.05.Ea A3. Hydride vapor-phase epitaxy Temperature 81.15.Kk Al. Crystal structure Inorganic compounds Pressure effects Growth rate Thick films VPE Hydrides XRD Substrates Partial pressure 68.37.-d Aluminium nitrides Rocking curve Growth mechanism Mirrors Surface layers Gallium selenides
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Snippet	Growth of AlN on sapphire (0 0 0 1) substrates by hydride vapor-phase epitaxy (HVPE) was investigated using AlCl 3 and NH 3 as source gases in the temperature... Growth of AlN on sapphire (0001) substrates by hydride vapor-phase epitaxy (HVPE) was investigated using AlCl3 and NH3 as source gases in the temperature range...
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SubjectTerms	A1. Crystal structure A3. Hydride vapor-phase epitaxy B1. Nitrides B2. Semiconducting aluminum compounds Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of crystal growth; physics of crystal growth Physics
Title	Growth of thick AlN layers by hydride vapor-phase epitaxy
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