Microstructural properties and atomic arrangements of GaN nanorods grown on Si (1 1 1) substrates by using hydride vapor phase epitaxy

• Published in: Journal of crystal growth Vol. 310; no. 12; pp. 2977 - 2980
• Main Authors: Lee, K.H., Kwon, Y.H., Ryu, S.Y., Kang, T.W., Jung, J.H., Lee, D.U., Kim, T.W.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-06-2008; Elsevier
• Subjects: A1. Nanostructures; A3. Vapor phase epitaxy; B1. Nanomaterials; B2. Semiconducting III–V materials; Chemical synthesis methods; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Methods of nanofabrication; Nanoscale materials and structures: fabrication and characterization; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Physics; Quantum wires; Structure of solids and liquids; crystallography; Vapor phase epitaxy; growth from vapor phase; 68.37.Lp; B2. Semiconducting III–V materials; A1. Nanostructures; B1. Nanomaterials; 61.72.Uj; A3. Vapor phase epitaxy; 61.46.Km; 61.05.Cp; Field emission; VPE; Hydrides; XRD; SAED; Nanostructures; Gallium nitride; B2. Semiconducting III-V materials; Atomic arrangement; Nanorod; Nanomaterial synthesis; Crystal structure; Scanning electron microscopy; Al. Nanostructures; Monocrystals; Transmission electron microscopy; Microstructure; Nanostructured materials; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.03.011

X-ray diffraction (XRD) patterns, field-emission scanning electron microscopy (FESEM) images, transmission electron microscopy (TEM) images, and selected area electron diffraction pattern (SADP) images showed that one-dimensional GaN nanorods with
c-axis-oriented single-crystalline wurzite structures were grown on Si (1
1
1) substrates by using improved hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects. The atomic arrangements for the GaN nanorods grown on the Si (1
1
1) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.