Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under w...

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Bibliographic Details
Published in:	IEEE transactions on electron devices Vol. 62; no. 9; pp. 2717 - 2723
Main Authors:	Pirro, Luca, Diab, Amer, Ionica, Irina, Ghibaudo, Gerard, Faraone, Lorenzo, Cristoloveanu, Sorin
Format:	Journal Article
Language:	English
Published:	IEEE 01-09-2015 Institute of Electrical and Electronics Engineers
Subjects:	Capacitance Capacitance measurement Engineering Sciences Frequency dependence Frequency measurement Logic gates Micro and nanotechnologies Microelectronics mobility Probes pseudo-MOSFET (Ψ-MOSFET) RC model Semiconductor device modeling Silicon silicon on insulator (SOI) split C-V Frequency dependence mobility RC model split C – V silicon on insulator (SOI) pseudo-MOSFET ( Psi -MOSFET) pseudo-MOSFET (Ψ-MOSFET) split C-V
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