Study of different type of dislocations in GaN thin films

• Published in: Journal of crystal growth Vol. 268; no. 3; pp. 484 - 488
• Main Authors: Yu, L.P, Shi, J.Y, Wang, Y.Z, Zhang, H
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-08-2004; Elsevier
• Subjects: A1. Mobility; A1. Rocking curve; B1. GaN thin films; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Exact sciences and technology; Experimental determination of defects by diffraction and scattering; Linear defects: dislocations, disclinations; Physics; Structure of solids and liquids; crystallography; A1. Mobility; 71.55.Eq; B1. GaN thin films; A1. Rocking curve; 61.72.Dd; Al. Rocking curve; Inorganic compounds; Epitaxial layers; Gallium nitrides; Binary compounds; VPE; Crystal growth from vapors; XRD; Experimental study; Voigt function; Dislocations; Thin films; Monocrystals; Transmission electron microscopy; MOVPE method; Rocking curve; Carrier mobility; III-V semiconductors; 71.55.Eq A1. Mobility; Bl. GaN thin films
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.04.077

High-resolution X-ray diffraction was used to analyze the type of dislocations in GaN epitaxial thin films. Rocking curves of five planes were investigated,
(0
0
0
2)
,
(1
0
1
̄
3)
,
(1
0
1
̄
2)
,
(1
0
1
̄
1)
, and
(2
0
2
̄
1)
, respectively. Pseudo-Voigt function was used to simulate the rocking-curve of every plane. Every extension of the rocking-curve was regarded as the effect of the interaction of the twist and tilt fractions of the dislocations. From the result, it is found that carrier mobility is more sensitive to substrate normal tilt dislocation than to in-plane twist and the interaction of the twist and tilt fractions also affect the carrier mobility.