Charge carrier traffic at self-assembled Ge quantum dots on Si

► Germanium quantum dots grown by MBE are characterized using two capacitance-based methods. ► The results provide information on the energy distribution of quantum dot states. ► Lower-temperature grown quantum dots had a wider distribution of energy states. ► The thermal activation energy for hole...

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Bibliographic Details
Published in:	Solid-state electronics Vol. 83; pp. 99 - 106
Main Authors:	Kaniewska, M., Engström, O., Karmous, A., Oehme, M., Petersson, G., Kasper, E.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Kidlington Elsevier Ltd 01-05-2013 Elsevier
Subjects:	Applied sciences Capacitance Cross-disciplinary physics: materials science; rheology Deep level transient spectroscopy Depletion Diodes Electric potential Electronic transport in quantum dots Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Physics Quantum confined energy states Quantum dots Self-assembled Ge/Si quantum dots Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Surface morphology Self-assembled Ge/Si quantum dots Molecular beam epitaxy Quantum confined energy states Electronic transport in quantum dots Deep level transient spectroscopy Surface morphology Self assembly Deep level transient spectrometry Quantum dot Diode Charge carrier Tunnel effect Surface structure Microelectronic fabrication p type semiconductor Silicon Activation energy Low temperature Voltage capacity curve Potential energy Potential distribution Energy distribution Doped materials Mean value Valence band Thermal activation Germanium
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