Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering

Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering

The room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium oxide, (Hf, Zr)O 2 , thin solid films is achieved with a single hafnium/zirconium, Hf/Zr, alloy target by reactive magnetron sputtering. After rapid thermal annealing (RTA), crystallization of our samples is analyzed by g...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Vol. 37; no. 2
Main Authors: Bouaziz, Jordan, Rojo Romeo, Pedro, Baboux, Nicolas, Vilquin, Bertrand
Format: Journal Article
Language:English
Published: American Vacuum Society (AVS) 01-03-2019
Subjects:
Chemical Sciences
Condensed Matter
Engineering Sciences
Material chemistry
Materials
Materials Science
Micro and nanotechnologies
Microelectronics
Physics
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Summary:The room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium oxide, (Hf, Zr)O 2 , thin solid films is achieved with a single hafnium/zirconium, Hf/Zr, alloy target by reactive magnetron sputtering. After rapid thermal annealing (RTA), crystallization of our samples is analyzed by grazing incidence x-ray diffraction. Changing the pressure inside the chamber during deposition leads to grow amorphous or monoclinic phase (m-phase). The authors demonstrate that if the (Hf, Zr)O 2 films are crystallized in the m-phase after deposition, no ferroelectric/orthorhombic phase can be obtained further. On the contrary, when the as-deposited film is amorphous, the ferroelectric/orthorhombic phase appears after the RTA. Published by the AVS. https://doi.org/10.1116/1.5060643
ISSN:0734-211X
1520-8567
DOI:10.1116/1.5060643