Growth of ultra-thin cerium oxide layers on Cu(1 1 1)

The reactive vacuum deposition of CeO 2 on Cu(1 1 1) surface in oxygen atmosphere provides high quality epitaxial ceria overlayers. We report the growth characteristics of Ce oxide, the structures, and the temperature stability of the oxide phases as investigated by low-energy electron diffraction (...

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Bibliographic Details
Published in:Applied surface science Vol. 254; no. 1; pp. 153 - 155
Main Authors: Matolín, V., Libra, J., Matolínová, I., Nehasil, V., Sedláček, L., Šutara, F.
Format: Journal Article Conference Proceeding
Language:English
Published: Amsterdam Elsevier B.V 31-10-2007
Elsevier Science
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Summary:The reactive vacuum deposition of CeO 2 on Cu(1 1 1) surface in oxygen atmosphere provides high quality epitaxial ceria overlayers. We report the growth characteristics of Ce oxide, the structures, and the temperature stability of the oxide phases as investigated by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy. We find that Ce oxide on the Cu(1 1 1) grows initially in the form of islands giving sharp hexagonal LEED pattern of the CeO 2(1 1 1) structure corresponding to the (1.5 × 1.5) structure. The CeO 2–Cu(1 1 1) films exhibited mixed valence states and temperature dependent CeO 2–Ce 2O 3 transition above 900 K due to the vacuum annealing. The transition progressed more rapidly at the surface, probably by formation of oxygen vacancies.
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ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2007.07.010