HBT optoelectronic mixer at microwave frequencies: modeling and experimental characterization

• Published in: Journal of lightwave technology Vol. 17; no. 8; pp. 1423 - 1428
• Main Authors: Lasri, J., Betser, Y., Sidorov, V., Cohen, S., Ritter, D., Orenstein, M., Eisenstein, G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-08-1999; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Conversion; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Frequency conversion; Gain; Heterojunction bipolar transistors; Integrated optoelectronics. Optoelectronic circuits; Mathematical models; Microwave and submillimeter wave devices, electron transfer devices; Microwave frequencies; Mixers; Nonlinear optics; Optical and optoelectronic circuits; Optical mixing; Optical modulation; Optoelectronics; RF signals; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Signal analysis; Signal processing; Transistors; Voltage; Microwave mixer; Small signal; Mixer; Heterojunction transistor; Optoelectronic device; Experimental study; Signal analysis; Modeling
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/50.779164

A heterojunction bipolar transistor (HBT) optoelectronic mixer was studied experimentally and theoretically. A detailed large signal /spl pi/-model and a small signal analysis are described. The frequency dependence of down and up conversion has been analyzed and measured. In terms of conversion gain, the advantage of the down conversion process is clearly demonstrated. The values of parameters employed in the mixing process are also discussed for both large and small signal regimes.