Low T direct plasma assisted growth of graphene on sapphire and its integration in graphene/MoS2 heterostructure-based photodetectors

• Published in: NPJ 2D materials and applications Vol. 7; no. 1; pp. 57 - 11
• Main Authors: Muñoz, R., López-Elvira, E., Munuera, C., Carrascoso, F., Xie, Y., Çakıroğlu, O., Pucher, T., Puebla, S., Castellanos-Gomez, A., García-Hernández, M.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 21-08-2023; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301/1005/1009; 639/638/298/918; Broadband; Carbon; Chemical vapor deposition; Chemistry and Materials Science; Gas mixtures; Graphene; Heterostructures; Insulators; Low temperature; Materials Science; Molybdenum disulfide; Nanotechnology; Optoelectronics; Photometers; Plasma; Sapphire; Surfaces and Interfaces; Thin Films
• DOI: 10.1038/s41699-023-00419-8
• EISSN: 2397-7132

We report on outstanding photo-responsivity,
R
 > 10
3
 A/W, fast response (~0.1 s), and broadband sensitivity ranging from the UV to the NIR in two terminal graphene/MoS
2
photodetectors. Our devices are based on the deterministic transfer of MoS
2
on top of directly grown graphene on sapphire, and their performance outperforms previous similar photodetectors using large-scale grown graphene. Here we devise a protocol for the direct growth of transparent (transmittance,
Tr
 > 90%), highly conductive (sheet resistance,
R
□
 < 1 kΩ) uniform and continuous graphene films on sapphire at 700 °C by using plasma-assisted chemical vapor deposition (CVD) with C
2
H
2
/H
2
gas mixtures. Our study demonstrates the successful use of plasma-assisted low-temperature CVD techniques to directly grow graphene on insulators for optoelectronic applications.