Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy

• Published in: Journal of electronic materials Vol. 47; no. 1; pp. 299 - 304
• Main Authors: Benyahia, D., Kubiszyn, Ł., Michalczewski, K., Kębłowski, A., Martyniuk, P., Piotrowski, J., Rogalski, A.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-01-2018; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Edge dislocations; Electronics and Microelectronics; Epitaxial growth; Gallium arsenide; Instrumentation; Materials research; Materials Science; Molecular beam epitaxy; Optical and Electronic Materials; Solid State Physics; Substrates; Threading dislocations; Transmission electron microscopy; X-rays; Molecular beam epitaxy; GaSb; high-resolution x-ray diffraction; IMF; semiconductor III–V
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-017-5766-4

Undoped GaSb epilayers, deposited at low growth temperature (440°C), have been grown on GaAs (001) substrate with 2° offcut towards [110], by a molecular beam epitaxy system. Interfacial misfit array (IMF) growth mode has been used in order to impede the propagation of the threading dislocations through the GaSb epilayer. Under optimized growth parameters, both transmission electron microscopy (TEM) measurements and high-resolution x-ray diffraction (HRXRD) revealed the presence of a periodic array of pure 90° edge dislocations along [110]. Furthermore, HRXRD shows a full width at half maximum of a 2-
μ
m-thick GaSb epilayer peak as low as 195 arcsec. In addition, the GaSb layer is found to be 99.8% relaxed, with a residual strain of 1.4 × 10
−4
. Moreover, based on TEM measurements, the dislocations spacing or the period of the IMF was found to be 5–5.2 nm.