Chemically deposited thin films of PbSe as an absorber component in solar cell structures
PbSe thin films were prepared by chemical deposition using dimethylselenourea as a source of selenide ions. Depending on the duration (30 min to 4 h) and temperature (30–60 °C) of the deposition, and the substrate, the films show a high degree of preferred orientation for the (111) planes. The textu...
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| Published in: | Thin solid films Vol. 519; no. 21; pp. 7432 - 7437 |
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| Format: | Journal Article Conference Proceeding |
| Language: | English |
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Elsevier B.V
31-08-2011
Elsevier |
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| Abstract | PbSe thin films were prepared by chemical deposition using dimethylselenourea as a source of selenide ions. Depending on the duration (30
min to 4
h) and temperature (30–60
°C) of the deposition, and the substrate, the films show a high degree of preferred orientation for the (111) planes. The texture coefficients could be up to 5 for these planes. The crystallite diameters are in the 30–35
nm range, and optical bad gap, 0.4–0.7
eV. The electrical conductivity is p-type, 0.01–10 (Ω
cm)
−
1
. These films were deposited over CdS/Sb
2S
3 or CdS/Sb
2Se
3 solar cell structures as an additional absorber. In a CdS/Sb
2Se
3/PbSe cell, this addition increases the short circuit current density (
J
sc
) from 0.2
mA/cm
2 to 8.9
mA/cm
2 and conversion efficiency (
η) from 0.04% to 0.99%. In a CdS/Sb
2S
3/PbSe cell,
J
sc
is 5.91
mA/cm
2;
η, 0.98%; and open circuit voltage, 560
mV. |
|---|---|
| AbstractList | PbSe thin films were prepared by chemical deposition using dimethylselenourea as a source of selenide ions. Depending on the duration (30min to 4h) and temperature (30-60 degree C) of the deposition, and the substrate, the films show a high degree of preferred orientation for the (111) planes. The texture coefficients could be up to 5 for these planes. The crystallite diameters are in the 30-35nm range, and optical bad gap, 0.4-0.7eV. The electrical conductivity is p-type, 0.01-10 (a"[brvbar]cm)-1. These films were deposited over CdS/Sb2S3 or CdS/Sb2Se3 solar cell structures as an additional absorber. In a CdS/Sb2Se3/PbSe cell, this addition increases the short circuit current density (J PbSe thin films were prepared by chemical deposition using dimethylselenourea as a source of selenide ions. Depending on the duration (30 min to 4 h) and temperature (30–60 °C) of the deposition, and the substrate, the films show a high degree of preferred orientation for the (111) planes. The texture coefficients could be up to 5 for these planes. The crystallite diameters are in the 30–35 nm range, and optical bad gap, 0.4–0.7 eV. The electrical conductivity is p-type, 0.01–10 (Ω cm) − 1 . These films were deposited over CdS/Sb 2S 3 or CdS/Sb 2Se 3 solar cell structures as an additional absorber. In a CdS/Sb 2Se 3/PbSe cell, this addition increases the short circuit current density ( J sc ) from 0.2 mA/cm 2 to 8.9 mA/cm 2 and conversion efficiency ( η) from 0.04% to 0.99%. In a CdS/Sb 2S 3/PbSe cell, J sc is 5.91 mA/cm 2; η, 0.98%; and open circuit voltage, 560 mV. |
| Author | Zingaro, Ralph A. Barrios-Salgado, Enue Nair, P.K. Nair, M.T.S. |
| Author_xml | – sequence: 1 givenname: Enue surname: Barrios-Salgado fullname: Barrios-Salgado, Enue organization: Department of Solar Energy Materials, Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos-62580, México – sequence: 2 givenname: M.T.S. surname: Nair fullname: Nair, M.T.S. email: mtsn@cie.unam.mx organization: Department of Solar Energy Materials, Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos-62580, México – sequence: 3 givenname: P.K. surname: Nair fullname: Nair, P.K. organization: Department of Solar Energy Materials, Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos-62580, México – sequence: 4 givenname: Ralph A. surname: Zingaro fullname: Zingaro, Ralph A. email: zingaro@chem.tamu.edu organization: Department of Chemistry, Texas A&M University, College Station, TX-77843, USA |
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| Cites_doi | 10.1021/nl802476m 10.1149/1.3089358 10.1021/j100044a036 10.1021/jo01131a010 10.1149/1.2426060 10.1021/nl901930g 10.1063/1.1736034 10.1149/1.2129655 10.1016/j.tsf.2005.07.238 10.1088/0268-1242/12/10/022 10.1063/1.356391 10.1149/1.2763963 10.1149/1.1838605 10.1557/PROC-865-F4.1 |
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| Keywords | Solar cells PbSe thin films Dimethylselenourea Chemical deposition Cell structure Electrical conductivity Lead selenides Gallium phosphide Cadmium sulfide Preferred orientation Texture AND circuit Thin film Solar cell Antimony sulfides Crystallites Antimony selenides Current density |
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| Snippet | PbSe thin films were prepared by chemical deposition using dimethylselenourea as a source of selenide ions. Depending on the duration (30
min to 4
h) and... PbSe thin films were prepared by chemical deposition using dimethylselenourea as a source of selenide ions. Depending on the duration (30min to 4h) and... |
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| SubjectTerms | Applied sciences Cadmium sulfides Chemical deposition Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Density Deposition Dimethylselenourea Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Energy Exact sciences and technology Natural energy PbSe thin films Photovoltaic conversion Physics Planes Solar cells Solar cells. Photoelectrochemical cells Solar energy Structure and morphology; thickness Surface layer Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Texture Thin film structure and morphology Thin films |
| Title | Chemically deposited thin films of PbSe as an absorber component in solar cell structures |
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