Effect of deposition rate and a-Si precursor or cap layer on structure and magnetic properties of iron films on silicon substrates

• Published in: Thin solid films Vol. 519; no. 24; pp. 8520 - 8523
• Main Authors: Gouralnik, A.S., Galkin, N.G., Ivanov, V.A., Cherednichenko, A.I., Plotnikov, V.S., Pustovalov, E.V.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 03-10-2011; Elsevier
• Subjects: Cross sections; Deposition; Deposition rate; Film growth; Film growth process; Intermixing; Iron; Magnetic properties; Precursors; Silicides; Silicon; Silicon surface; X-ray photoelectron spectroscopy; Film growth process; Iron; Deposition rate; Silicon surface; Silicides; Intermixing
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.05.039

Ultrafast-deposition and a-Si precursor or cap layer are analyzed as possible approaches to the control upon interface intermixing and film growth process. A simple and effective design is delivered providing deposition rates up to 10
4
nm/s. XPS results evidence formation of Fe
3Si in the layered structure Fe/a-Si/Si. Cross-section HRTEM data demonstrate enhanced intermixing at the a-Si/Fe film interface. Magnetic properties of the Fe–Si structures grown by the above methods are studied by in situ magneto-optic Kerr effect. Intermixing at the Fe/Si interface is the result of chemical reaction rather than diffusion.