Room-temperature epitaxial growth of high-quality m -plane InGaN films on ZnO substrates

• Published in: Physica status solidi. PSS-RRL. Rapid research letters Vol. 3; no. 4; pp. 124 - 126
• Main Authors: Shimomoto, Kazuma, Kobayashi, Atsushi, Ueno, Kohei, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01-05-2009; WILEY‐VCH Verlag
• Subjects: 61.05.cp; 68.55.ag; 81.05.Ea; 81.15.Fg
• ISSN: 1862-6254; 1862-6270
• DOI: 10.1002/pssr.200903072

The authors have grown high‐quality m ‐plane In0.36Ga0.64N (1$ \bar 1 $00) films on ZnO (1$ \bar 1 $00) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m ‐plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two‐dimensional mode. X‐ray diffraction measurements have revealed that the m ‐plane InGaN films grow without phase separation reactions at RT. The full‐width at half‐maximum values of the 1$ \bar 1 $00 X‐ray rocking curves of films with X‐ray incident azimuths perpendicular to the c ‐ and a‐axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space‐mapping has revealed that a 50 nm thick m ‐plane In0.36Ga0.64N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The authors have grown high‐quality m ‐plane In0.36Ga0.64N films on ZnO substrates by pulsed laser deposition at room temperature. The full‐width at half‐maximum values of the (1$ \bar 1 $00) X‐ray rocking curves of the film were quite small. Reciprocal space‐mapping has revealed that a 50 nm thick m ‐plane In0.36Ga0.64N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film.