Diffusion studies in magnetron sputter deposited silicon nitride films

• Published in: Surface & coatings technology Vol. 255; pp. 37 - 42
• Main Authors: Kulczyk-Malecka, J., Kelly, P.J., West, G., G.C.B., Clarke, Ridealgh, J.A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 25-09-2014; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Diffusion; Exact sciences and technology; Magnetron sputtering; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Production techniques; Silicon nitride; Surface treatment; Surface treatments; Thin films; Thin films; Magnetron sputtering; Diffusion; Silicon nitride; Magnetrons; Scattering; Physical vapor deposition; Surface treatments; Sputtering
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2013.11.027

In this work, silicon nitride coatings were deposited by magnetron sputtering onto float glass substrates and post-deposition annealed at 650°C for 5min. The structures and compositions of the coatings were investigated by X-ray diffraction, X-ray reflectometry, scanning electron microscopy and energy dispersive X-ray spectroscopy. Samples were then over-coated with silver and subjected to a second annealing process to initiate the diffusion of silver through the adjacent coating layers. Additional silicon nitride coatings were then deposited on selected samples to produce Si3N4/Ag/Si3N4/glass stacks, which were annealed at temperatures in the range 100–600°C. Ag and Na diffusion coefficients were then calculated from compositional profiles obtained from time of flight secondary ion mass spectrometry analysis. The coatings deposited in this study were found to have stoichiometric Si3N4 compositions and were amorphous after annealing. The diffusion rate of silver through these coatings was found to depend on annealing temperature and coating density and roughness, which in turn can be related to the deposition conditions.
•Ag/Si3N4 and Si3N4/Ag/Si3N4 stacks were deposited by magnetron sputtering•Silver diffusion was measured using TOF-SIMS depth profiling analysis•Diffusion coefficient values were calculated using Fick's second diffusion law•Temperature dependency on silver diffusion was studied using Arrhenius equation•Deposited Si3N4 films were amorphous and had stoichiometric composition