Prediction of magnetic flux-controlled gate voltage in superconducting field-effect transistors

• Published in: IEEE electron device letters Vol. 10; no. 2; pp. 82 - 84
• Main Author: Glasser, L.A.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-02-1989; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Critical current; Electronics; Exact sciences and technology; FETs; Integrated circuit measurements; Laboratories; Magnetic flux; Maxwell equations; MOSFETs; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Superconducting devices; Superconducting magnets; Voltage control; Field effect transistor; Theoretical study; Superconductor device; Mathematical model; Josephson junction; One dimensional model
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.32436

The undirectional model to the superconducting field-effect transistor (SFET) is shown to be thermodynamically unsound. A gate voltage which is controlled by the magnetic flux difference in a Josephson weak link is predicted by energy arguments. For a passive SFET model to be consistent with recent experimental observations of a charge-controlled critical current, a back-reaction from the DC drain-to-source flux (phase difference) to the DC gate voltage is required. As this effect is important in large devices and occurs at V/sub DS/=0, it does not appear to be directly related to charge-space energy bands or quasiparticle interference.< >