Evolution of tin whiskers and subsiding grains in thermal cycling

The evolution of surface morphology, including whisker formation, grain boundary cracking, and subsiding grains, was studied in Sn thin films on Si substrates with a Cu interlayer during thermal cycling from −40 to 85 °C in air for up to 250 cycles and was compared with surface morphologies resultin...

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Published in:Journal of materials science Vol. 49; no. 3; pp. 1099 - 1113
Main Authors: Wang, Ying, Blendell, John E., Handwerker, Carol A.
Format: Journal Article
Language:English
Published: Boston Springer US 01-02-2014
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Abstract The evolution of surface morphology, including whisker formation, grain boundary cracking, and subsiding grains, was studied in Sn thin films on Si substrates with a Cu interlayer during thermal cycling from −40 to 85 °C in air for up to 250 cycles and was compared with surface morphologies resulting from room temperature aging. Multiple areas were tracked, and the areal density of whiskers and the grain morphologies within these areas were monitored over time for room temperature aging and with increasing number of thermal cycles. During room temperature aging, the whisker density increased with time until saturation ~3 weeks after plating. As for thermal cycling, the whisker density was observed first to increase but then to decrease as a result of a whisker pinch-off phenomenon. The characteristic features of whiskers formed during thermal cycling included the formation of deep grooves along the in-plane grain boundaries of whiskers (“whisker root”), a decrease in whisker radii as they grew, striation rings on whiskers perpendicular to the whisker growth direction, corresponding striations along grooved surfaces in the film, albeit at different spatial periodicities than those on their corresponding whiskers, and whisker pinch-off as whiskers became prone to fracture as their radii decreased. Whiskers formed during room temperature aging did not display such grooving or pinch-off. A whisker pinch-off model was proposed to explain the observed morphological changes and the resulting decrease in whisker density during thermal cycling, with a calculated whisker growth rate that agrees with the experimental observation.
AbstractList The evolution of surface morphology, including whisker formation, grain boundary cracking, and subsiding grains, was studied in Sn thin films on Si substrates with a Cu interlayer during thermal cycling from -40 to 85 °C in air for up to 250 cycles and was compared with surface morphologies resulting from room temperature aging. Multiple areas were tracked, and the areal density of whiskers and the grain morphologies within these areas were monitored over time for room temperature aging and with increasing number of thermal cycles. During room temperature aging, the whisker density increased with time until saturation *3 weeks after plating. As for thermal cycling, the whisker density was observed first to increase but then to decrease as a result of a whisker pinch-off phenomenon. The characteristic features of whiskers formed during thermal cycling included the formation of deep grooves along the in-plane grain boundaries of whiskers ("whisker root"), a decrease in whisker radii as they grew, striation rings on whiskers perpendicular to the whisker growth direction, corresponding striations along grooved surfaces in the film, albeit at different spatial periodicities than those on their corresponding whiskers, and whisker pinch-off as whiskers became prone to fracture as their radii decreased. Whiskers formed during room temperature aging did not display such grooving or pinch-off. A whisker pinch-off model was proposed to explain the observed morphological changes and the resulting decrease in whisker density during thermal cycling, with a calculated whisker growth rate that agrees with the experimental observation.
The evolution of surface morphology, including whisker formation, grain boundary cracking, and subsiding grains, was studied in Sn thin films on Si substrates with a Cu interlayer during thermal cycling from −40 to 85 °C in air for up to 250 cycles and was compared with surface morphologies resulting from room temperature aging. Multiple areas were tracked, and the areal density of whiskers and the grain morphologies within these areas were monitored over time for room temperature aging and with increasing number of thermal cycles. During room temperature aging, the whisker density increased with time until saturation ~3 weeks after plating. As for thermal cycling, the whisker density was observed first to increase but then to decrease as a result of a whisker pinch-off phenomenon. The characteristic features of whiskers formed during thermal cycling included the formation of deep grooves along the in-plane grain boundaries of whiskers (“whisker root”), a decrease in whisker radii as they grew, striation rings on whiskers perpendicular to the whisker growth direction, corresponding striations along grooved surfaces in the film, albeit at different spatial periodicities than those on their corresponding whiskers, and whisker pinch-off as whiskers became prone to fracture as their radii decreased. Whiskers formed during room temperature aging did not display such grooving or pinch-off. A whisker pinch-off model was proposed to explain the observed morphological changes and the resulting decrease in whisker density during thermal cycling, with a calculated whisker growth rate that agrees with the experimental observation.
The evolution of surface morphology, including whisker formation, grain boundary cracking, and subsiding grains, was studied in Sn thin films on Si substrates with a Cu interlayer during thermal cycling from −40 to 85 °C in air for up to 250 cycles and was compared with surface morphologies resulting from room temperature aging. Multiple areas were tracked, and the areal density of whiskers and the grain morphologies within these areas were monitored over time for room temperature aging and with increasing number of thermal cycles. During room temperature aging, the whisker density increased with time until saturation ~3 weeks after plating. As for thermal cycling, the whisker density was observed first to increase but then to decrease as a result of a whisker pinch-off phenomenon. The characteristic features of whiskers formed during thermal cycling included the formation of deep grooves along the in-plane grain boundaries of whiskers (“whisker root”), a decrease in whisker radii as they grew, striation rings on whiskers perpendicular to the whisker growth direction, corresponding striations along grooved surfaces in the film, albeit at different spatial periodicities than those on their corresponding whiskers, and whisker pinch-off as whiskers became prone to fracture as their radii decreased. Whiskers formed during room temperature aging did not display such grooving or pinch-off. A whisker pinch-off model was proposed to explain the observed morphological changes and the resulting decrease in whisker density during thermal cycling, with a calculated whisker growth rate that agrees with the experimental observation.
The evolution of surface morphology, including whisker formation, grain boundary cracking, and subsiding grains, was studied in Sn thin films on Si substrates with a Cu interlayer during thermal cycling from a40 to 85 degree C in air for up to 250 cycles and was compared with surface morphologies resulting from room temperature aging. Multiple areas were tracked, and the areal density of whiskers and the grain morphologies within these areas were monitored over time for room temperature aging and with increasing number of thermal cycles. During room temperature aging, the whisker density increased with time until saturation ~3 weeks after plating. As for thermal cycling, the whisker density was observed first to increase but then to decrease as a result of a whisker pinch-off phenomenon. The characteristic features of whiskers formed during thermal cycling included the formation of deep grooves along the in-plane grain boundaries of whiskers (awhisker roota), a decrease in whisker radii as they grew, striation rings on whiskers perpendicular to the whisker growth direction, corresponding striations along grooved surfaces in the film, albeit at different spatial periodicities than those on their corresponding whiskers, and whisker pinch-off as whiskers became prone to fracture as their radii decreased. Whiskers formed during room temperature aging did not display such grooving or pinch-off. A whisker pinch-off model was proposed to explain the observed morphological changes and the resulting decrease in whisker density during thermal cycling, with a calculated whisker growth rate that agrees with the experimental observation.
Audience Academic
Author Wang, Ying
Blendell, John E.
Handwerker, Carol A.
Author_xml – sequence: 1
  givenname: Ying
  surname: Wang
  fullname: Wang, Ying
  email: wang544@purdue.edu
  organization: School of Materials Engineering, Purdue University
– sequence: 2
  givenname: John E.
  surname: Blendell
  fullname: Blendell, John E.
  organization: School of Materials Engineering, Purdue University
– sequence: 3
  givenname: Carol A.
  surname: Handwerker
  fullname: Handwerker, Carol A.
  organization: School of Materials Engineering, Purdue University
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Issue 3
Keywords Deep Groof
Room Temperature Aging
Whisker Formation
Whisker Growth
Whisker Density
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Snippet The evolution of surface morphology, including whisker formation, grain boundary cracking, and subsiding grains, was studied in Sn thin films on Si substrates...
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SubjectTerms Aging
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Comparative analysis
Copper
Crystallography and Scattering Methods
Density
Dielectric films
Evolution
Grain boundaries
Grooves
Interlayers
Materials Science
Morphology
Polymer Sciences
Silicon substrates
Solid Mechanics
Striations
Thermal cycling
Thin films
Tin
Title Evolution of tin whiskers and subsiding grains in thermal cycling
URI https://link.springer.com/article/10.1007/s10853-013-7788-5
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https://search.proquest.com/docview/1506380006
Volume 49
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