Effect of High BZO Dopant Levels on Performance of 2G-HTS MOCVD Wire at Intermediate and Low Temperatures

• Published in: IEEE transactions on applied superconductivity Vol. 23; no. 3; p. 6602605
• Main Authors: Majkic, G., Yao Yao, Jinfgu Liu, Yuhao Liu, Khatri, N. D., Tuo Shi, Yimin Chen, Galstyan, E., Changhui Lei, Selvamanickam, V.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01-06-2013; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Anisotropy; Applied sciences; Barium zirconates; CHEMICAL VAPOR DEPOSITION; Conductors; COPPER OXIDE; Diffraction; Dopants; DOPING; Electronics; Exact sciences and technology; FLUX PINNING; High temperature superconductors; Integrated circuits; Microelectronic fabrication (materials and surfaces technology); Mineralogy; Nanorods; Pinning; Rare earth metals; Self assembly; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature; Transmission electron microscopy; WIRE; X-ray diffraction; Zirconium; Performance evaluation; Self assembly; high temperature superconductors; Doping; X-ray diffraction; X ray diffraction; Chemical vapor deposition; MOCVD; Degradation; Microelectronic fabrication; Flux pinning; Transmission electron microscopy; Anisotropy; Microstructure; Nanorod; High temperature superconductor; Low temperature; Damaging
• DOI: 10.1109/TASC.2012.2236675
• EISSN: 1558-2515
• ISSN: 1051-8223

Flux pinning in REBCO (rare-earth Ba-Cu-O) by self-assembly of BZO (barium zirconate) nanorods has emerged as one of the most prominent techniques for improving the in-field performance of 2G-HTS wire in terms of I c and angular I c anisotropy. In our previous study on metalorganic chemical vapor deposition REBCO wire, an optimum performance was found for 7.5% Zr at 1 T, 77 K, while further increase in Zr content resulted in I c and T c degradation. However, recent results indicate that the pinning performance at high Zr content actually surpasses that of the 7.5% Zr wire at intermediate and low temperatures. In-depth understanding of the effect of high Zr levels on REBCO provides a strong potential for further substantial increase in pinning performance at high Zr content if the unwanted effects can be minimized by process modification. In this study, we analyze the effect of high Zr doping levels on REBCO properties with emphasis on microstructure analysis. Structural properties as a function of BZO dopant level have been analyzed using X-ray reciprocal space maps and transmission electron microscopy, while the performance has been characterized using angular in-field I c characterization up to 9T at temperatures of 20-77 K.