Atmospheric Pressure Radio-Frequency DBD Deposition of Dense Silicon Dioxide Thin Film

• Published in: Plasma processes and polymers Vol. 13; no. 10; pp. 1015 - 1024
• Main Authors: Bazinette, Rémy, Paillol, Jean, Lelièvre, Jean-François, Massines, Françoise
• Format: Journal Article
• Language: English
• Published: Weinheim Blackwell Publishing Ltd 01-10-2016; Wiley Subscription Services, Inc; Wiley-VCH Verlag
• Subjects: Atmospheric pressure; Deposition; dielectric barrier discharge; duty cycle; Electric potential; Electric power; Engineering Sciences; Formations; Low frequencies; Modulation; PECVD; Plasmas; Precursors; pulsed plasma; radio-frequency; room temperature; silane; Thin films; Voltage
• ISSN: 1612-8850; 1612-8869
• DOI: 10.1002/ppap.201600038

Radio‐frequency (RF) homogeneous dielectric barrier discharge (DBD) is compared to low frequency glow DBD to make silicon oxide from Ar/NH3/SiH4. RF‐DBD is a more powerful discharge, and the growth rate is not limited by precursor dissociation rate but by powder formation. Powders are not deposited in the plasma zone but in the post‐discharge due to their trapping by the electric field. Modulation of the RF‐DBD is a useful solution to avoid powder formation. Powders are systematically avoided if the plasma energy during time on stays below 750 µJ. RF‐DBD modulation also increases the growth rate twofold compare to continuous RF. The optimum growth rate without powder corresponds to a short Ton to limit precursor dissociation, a long Toff to enhance diffusion and a fast repeat frequency to increase deposition rate.
The aim of this paper is to contribute to find a solution for atmospheric pressure PECVD of dense silicon dioxide film at a growth rate suitable for industrial applications. The radio‐frequency voltage (> 1 MHz) instead of the standard low frequency voltage (< 100 kHz) allows higher discharge power and higher growth rate related to higher precursor dissociation rate. RF‐DBD modulation avoid powder formation and increases two folds the growth rate.