Lithography Options for the 32 nm Half Pitch Node and Beyond

Three major technological lithography options have been reviewed for high volume manufacturing at the 32 nm half pitch node: 193 nm immersion lithography with high index materials, enabling NA > 1.6; 193 nm double patterning and EUV lithography. In this paper the evolution of these three options...

Full description

Saved in:

Bibliographic Details
Published in:	IEEE transactions on circuits and systems. I, Regular papers Vol. 56; no. 8; pp. 1884 - 1891
Main Authors:	Ronse, K., Jansen, P., Gronheid, R., Hendrickx, E., Maenhoudt, M., Wiaux, V., Goethals, A.-M., Jonckheere, R., Vandenberghe, G.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-08-2009 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	193 nm immersion lithography 22 nm half pitch node 32 nm half pitch node Costs Encounters Extreme ultra-violet lithography Immersion Lenses Liquids Lithography Manufacturing Offset printing Optical materials Patterning Production Refractive index Resists Roughness Ultraviolet sources
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Be the first to leave a comment!