Carrier transport in two-dimensional graphene layers

Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreement is obtained (for carrier density n>10(12) cm(-2)) with existing experimental data. The conductivity scales linearly...

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Bibliographic Details
Published in:	Physical review letters Vol. 98; no. 18; p. 186806
Main Authors:	Hwang, E H, Adam, S, Sarma, S Das
Format:	Journal Article
Language:	English
Published:	United States 04-05-2007
Online Access:	Get full text
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Abstract	Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreement is obtained (for carrier density n>10(12) cm(-2)) with existing experimental data. The conductivity scales linearly with n/n(i) in the theory. We explain the experimentally observed asymmetry between electron and hole conductivities, and the high-density saturation of conductivity for the highest mobility samples. We argue that the experimentally observed saturation of conductivity at low density arises from the charged impurity induced inhomogeneity in the graphene carrier density which becomes severe for n less, similarn(i) approximately 10(12) cm(-2).
AbstractList	Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreement is obtained (for carrier density n>10(12) cm(-2)) with existing experimental data. The conductivity scales linearly with n/n(i) in the theory. We explain the experimentally observed asymmetry between electron and hole conductivities, and the high-density saturation of conductivity for the highest mobility samples. We argue that the experimentally observed saturation of conductivity at low density arises from the charged impurity induced inhomogeneity in the graphene carrier density which becomes severe for n less, similarn(i) approximately 10(12) cm(-2). Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreement is obtained (for carrier density n>10(12) cm(-2)) with existing experimental data. The conductivity scales linearly with n/n(i) in the theory. We explain the experimentally observed asymmetry between electron and hole conductivities, and the high-density saturation of conductivity for the highest mobility samples. We argue that the experimentally observed saturation of conductivity at low density arises from the charged impurity induced inhomogeneity in the graphene carrier density which becomes severe for n less, similarn(i) approximately 10(12) cm(-2).
ArticleNumber	186806
Author	Sarma, S Das Adam, S Hwang, E H
Author_xml	– sequence: 1 givenname: E H surname: Hwang fullname: Hwang, E H organization: Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA – sequence: 2 givenname: S surname: Adam fullname: Adam, S – sequence: 3 givenname: S Das surname: Sarma fullname: Sarma, S Das
BackLink	https://www.ncbi.nlm.nih.gov/pubmed/17501596$$D View this record in MEDLINE/PubMed
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