Progress Toward 1000-mV Open-Circuit Voltage on Chalcopyrite Solar Cells

Previously, an open-circuit voltage of 960 mV was reported on Se-free Cu(In,Ga)S 2 (CIGS) solar cell with a CdS buffer layer. In this paper, we report our latest progress toward 1000 mV on a Se-free Cu(In,Ga)S 2 solar cell with a Cd-free buffer layer. The highest open-circuit voltage of 973 mV was d...

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Bibliographic Details
Published in:	IEEE journal of photovoltaics Vol. 6; no. 6; pp. 1630 - 1634
Main Authors:	Hiroi, Homare, Iwata, Yasuaki, Sugimoto, Hiroki, Yamada, Akira
Format:	Journal Article
Language:	English
Published:	Piscataway IEEE 01-11-2016 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Buffer layers Cadmium compounds Copper compounds Cu(In Ga)S2 (CIGS high open-circuit voltage II-VI semiconductor materials Photovoltaic cells Photovoltaic systems Rapid thermal annealing rapid thermal annealing (RTA) Surface treatment Zn1-xMgxO buffer layer
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Summary:	Previously, an open-circuit voltage of 960 mV was reported on Se-free Cu(In,Ga)S 2 (CIGS) solar cell with a CdS buffer layer. In this paper, we report our latest progress toward 1000 mV on a Se-free Cu(In,Ga)S 2 solar cell with a Cd-free buffer layer. The highest open-circuit voltage of 973 mV was demonstrated by rapid thermal annealing and Zn 1-x Mg x O buffer layer application.
ISSN:	2156-3381 2156-3403
DOI:	10.1109/JPHOTOV.2016.2598263