Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

• Published in: Physics of the solid state Vol. 60; no. 3; pp. 504 - 509
• Main Authors: Antipov, V. V., Kukushkin, S. A., Osipov, A. V., Rubets, V. P.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-03-2018; Springer; Springer Nature B.V
• Subjects: Analysis; Buffer layers; BUFFERS; CADMIUM; Cadmium compounds; Cadmium selenide; CADMIUM SELENIDES; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; Crystal structure; Diffraction; Diffraction patterns; ELECTRON DIFFRACTION; Ellipsometry; Epitaxial growth; EPITAXY; EVAPORATION; EVAPORATORS; LAYERS; Physics; Physics and Astronomy; POLYCRYSTALS; POWDERS; RAMAN SPECTRA; SELENIUM; Selenium compounds; Semiconductors; SILICON; Silicon carbide; SILICON CARBIDES; Silicon substrates; Solid State Physics; SUBSTRATES; SURFACES
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783418030022

An epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe
2
, a high-quality ~100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.