Monolithically Integrated Logic nor Gate Based on GaAs/AlGaAs Three-Terminal Junctions

• Published in: IEEE electron device letters Vol. 28; no. 10; pp. 859 - 861
• Main Authors: Muller, C.R., Worschech, L., Hopfner, P., Hofling, S., Forchel, A.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-10-2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum gallium arsenides; Applied sciences; Circuit properties; Compound structure devices; Design. Technologies. Operation analysis. Testing; Digital circuits; Drains; Electric potential; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Epitaxial layers; Exact sciences and technology; Gallium arsenide; Gates; Integrated circuit; Integrated circuits; Joining processes; Logic; Logic circuits; Logic devices; Logic gates; logic nor gate; Molecular beam epitaxial growth; Scanning electron microscopy; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature; three-terminal junction (TTJs); Transistors; Voltage; Transistor drain; three- terminal junction (TTJs); Logic gate; Transistor; Modulation doping; NOR circuit; Logic circuit; Logical function; Integrated circuit; Drain current; logic NOR gate; Drain voltage; Heterostructures; Room temperature
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2007.906108

Room-temperature operation of a logic NOR gate is demonstrated. The NOR gate is based on three three-terminal junctions (TTJs) monolithically integrated in a modulation-doped GaAs/AlGaAs heterostructure without any external load resistance. For the logic NOR gate, one of the TTJs serves as load transistor, whereas the other two are used as inputs. Each TTJ has a 90-nm-wide channel and shows clear transistor characteristics with drain currents up to 10 muA for a drain voltage of 1 V. Furthermore, voltage amplification is demonstrated for the logic NOR-gate function.