On Change in the Silicon Crystal Structure Implanted with Hydrogen Ions during Annealing Based on Three-Crystal X-Ray Diffractometry Data

• Published in: Physics of the solid state Vol. 61; no. 8; pp. 1383 - 1388
• Main Authors: Asadchikov, V. E., D’yachkova, I. G., Zolotov, D. A., Chukhovskii, F. N., Sorokin, L. M.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-08-2019; Springer; Springer Nature B.V
• Subjects: Analysis; ANGULAR DISTRIBUTION; Angular position; ANNEALING; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Crystal defects; CRYSTAL STRUCTURE; CRYSTALS; Defect annealing; DEFECTS; DOSES; Hydrogen; HYDROGEN IONS; ION IMPLANTATION; KEV RANGE; Physics; Physics and Astronomy; Radiation damage; RADIATION EFFECTS; Semiconductors; SILICON; Solid State Physics; Structure; TEMPERATURE RANGE; X-RAY DIFFRACTION; three-crystal X-ray diffractometry; radiation defects; silicon; hydrogen ions; post-implantation annealing
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783419080079

In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 200 + 300 keV and a total dose of 2 × 10
16
cm
–2
during the subsequent heat exposure in the temperature range from 200 to 1100°C. Here, X-ray studies were performed in the three-crystal XRD scheme when the sample under consideration operates as a second stationary crystal with various fixed angular detuning α from the Bragg position while the third (perfect) crystal-analyzer sweeps the angular distribution of radiation diffracted by the second crystal. Based on a comparison of the shape of diffraction and diffuse maxima for the samples under study, a qualitative conclusion about a significant transformation of radiation defects at post-implantation annealing was derived.