Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

• Published in: IEEE photonics technology letters Vol. 17; no. 2; pp. 288 - 290
• Main Authors: Wuu, D.S., Wang, W.K., Shih, W.C., Horng, R.H., Lee, C.E., Lin, W.Y., Fang, J.S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-02-2005; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Electroluminescence; Emission; Epitaxial layers; Etching; Extraction; Gallium nitride; GaN; InGaN; Light emitting diodes; light-emitting diode (LED); Liquid crystal displays; Lithography; Materials science and technology; near ultraviolet (UV); patterned sapphire substrate (PSS); Power generation; Quantum efficiency; Quantum well devices; Sapphire; Substrates; Threading dislocations; Wavelengths
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2004.839012

Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.